Infineon IPD Type N-Channel MOSFET, 35 A, 120 V Enhancement, 3-Pin PG-TO-252 IPD35N12S3L24ATMA1
- RS庫存編號:
- 258-3840
- 製造零件編號:
- IPD35N12S3L24ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
HK$61.10
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | HK$12.22 | HK$61.10 |
| 10 - 95 | HK$11.62 | HK$58.10 |
| 100 - 245 | HK$10.92 | HK$54.60 |
| 250 - 495 | HK$10.14 | HK$50.70 |
| 500 + | HK$9.36 | HK$46.80 |
* 參考價格
- RS庫存編號:
- 258-3840
- 製造零件編號:
- IPD35N12S3L24ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | IPD | |
| Package Type | PG-TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 71W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series IPD | ||
Package Type PG-TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 71W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T power-transistor is power MOSFET for automotive applications. It has 175°C operating temperature.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
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