Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- RS庫存編號:
- 258-3868
- 製造零件編號:
- IPD90P04P405ATMA2
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$18,912.50
訂單超過 HK$250.00 免費送貨
有庫存
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$7.565 | HK$18,912.50 |
| 5000 - 5000 | HK$7.414 | HK$18,535.00 |
| 7500 + | HK$7.266 | HK$18,165.00 |
* 參考價格
- RS庫存編號:
- 258-3868
- 製造零件編號:
- IPD90P04P405ATMA2
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -90A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -90A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain-Source Voltage, 125W Maximum Power Dissipation - IPD90P04P405ATMA2
This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in demanding environments. It operates across a wide temperature span and is suitable for high-current applications where low on-resistance and robust gate handling are required. The device meets automotive reliability standards and environmental directives for use in regulated sectors.
Features and Benefits:
• 4.7mΩ Rds(on) reduces conduction losses and improves efficiency
• 90A continuous drain current supports high-current switching loads
• 118nC typical gate charge enables predictable switching performance
• 20V maximum gate-source tolerance allows flexible gate drive margins
• 125W power dissipation manages high power in Compact assemblies
• 90A continuous drain current supports high-current switching loads
• 118nC typical gate charge enables predictable switching performance
• 20V maximum gate-source tolerance allows flexible gate drive margins
• 125W power dissipation manages high power in Compact assemblies
Applications
• Suitable for high-current DC power distribution stages
• Ideal for automotive power modules under AEC‑Q101 requirements
• Used with Compact heatsinking in surface-mount power designs
• Can be used for synchronous switching in power converters
• Ideal for automotive power modules under AEC‑Q101 requirements
• Used with Compact heatsinking in surface-mount power designs
• Can be used for synchronous switching in power converters
What temperature range can it withstand in operation?
It operates from -55°C up to 175°C, allowing use in wide thermal environments.
How does package choice affect assembly?
The TO-252 package facilitates surface-mount placement and thermal conduction to PCB landings.
What standards and directives has it met?
It conforms to DIN IEC 68-1 and is RoHS compliant as indicated in the specifications.
What channel characteristics determine switching behaviour?
The device is P-type enhancement mode, which defines polarity and gate-driven conduction behaviour.
相关链接
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement TO-252 IPD85P04P407ATMA2
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- Infineon IPD N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD048N06L3GATMA1
- Infineon IPD N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90N04S4L04ATMA1
- Infineon IPD N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD90N10S406ATMA1