Infineon IPU N-Channel MOSFET, 14 A, 950 V, 3-Pin TO-251 IPU95R450P7AKMA1
- RS庫存編號:
- 258-3904
- 製造零件編號:
- IPU95R450P7AKMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 75 件）*
HK$932.63
訂單超過 HK$250.00 免費送貨
有庫存
- 1,425 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | HK$12.435 | HK$932.63 |
| 150 - 150 | HK$11.192 | HK$839.40 |
| 225 + | HK$10.967 | HK$822.53 |
* 參考價格
- RS庫存編號:
- 258-3904
- 製造零件編號:
- IPU95R450P7AKMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | IPU | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series IPU | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 950V CoolMOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Enabling higher power density designs, BOM savings, and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
相关链接
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