Infineon HEXFET N-Channel MOSFET, 180 A, 30 V WDSON IRF6727MTRPBF
- RS庫存編號:
- 258-3966
- 製造零件編號:
- IRF6727MTRPBF
- 製造商:
- Infineon
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- RS庫存編號:
- 258-3966
- 製造零件編號:
- IRF6727MTRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDSON | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 770mV | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDSON | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 770mV | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Compact form factor
High efficiency
Environmentally friendly
相关链接
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