Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252

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小計(1 卷,共 2000 件)*

HK$9,154.00

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  • 2026年12月14日 發貨
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2000 - 2000HK$4.577HK$9,154.00
4000 - 4000HK$4.485HK$8,970.00
6000 +HK$4.396HK$8,792.00

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RS庫存編號:
258-3998
製造零件編號:
IRLR3915TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

17mΩ

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

61nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

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