Infineon IRF8736 N-Channel MOSFET, 18 A, 30 V Enhancement, 8-Pin SO-8 IRF8736TRPBF
- RS庫存編號:
- 258-8204
- 製造零件編號:
- IRF8736TRPBF
- 製造商:
- Infineon
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HK$62.00
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|---|---|---|
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| 50 - 90 | HK$6.02 | HK$60.20 |
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| 500 - 1990 | HK$5.15 | HK$51.50 |
| 2000 + | HK$4.53 | HK$45.30 |
* 參考價格
- RS庫存編號:
- 258-8204
- 製造零件編號:
- IRF8736TRPBF
- 製造商:
- Infineon
規格
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | IRF8736 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series IRF8736 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon IRF8736 Series MOSFET, 30V Maximum Drain-Source Voltage, 18A Maximum Continuous Drain Current - IRF8736TRPBF
This MOSFET is an N-channel enhancement device intended for low-voltage switching and power management in Compact surface-mount assemblies. It operates across a wide temperature range and is supplied in an SO-8 package for PCB mounting. The part conforms to RoHS directives and is designed for applications that require efficient conduction and controlled gate-drive energy.
Features and Benefits:
• 4.8mΩ Rds(on) for lower conduction losses and improved efficiency
• 17nC typical gate charge for predictable switching speed
• 30V Vds rating for low-voltage power-switching applications
• 18A continuous drain capability for moderate current loads
• 2.5W power dissipation for Compact thermal-budget designs
• 17nC typical gate charge for predictable switching speed
• 30V Vds rating for low-voltage power-switching applications
• 18A continuous drain capability for moderate current loads
• 2.5W power dissipation for Compact thermal-budget designs
Applications
• Used for DC power switching in control modules
• Suitable for motor-driver stages with moderate current
• Ideal for high-efficiency power converters in restricted space
• Can be used for load switching on Compact assemblies
• Used with gate drivers requiring up to 20V gate voltage
• Suitable for motor-driver stages with moderate current
• Ideal for high-efficiency power converters in restricted space
• Can be used for load switching on Compact assemblies
• Used with gate drivers requiring up to 20V gate voltage
What gate voltage limits should be observed?
The device must not be driven beyond a 20V gate-to-source differential to avoid gate overstress.
What operating temperatures can it tolerate?
It is specified to operate from -55°C up to 150°C for broad thermal environments.
How should its thermal dissipation be considered on a board?
With 2.5W maximum dissipation, layout should include copper area or thermal vias to manage junction temperature.
Is this component suitable for automotive-rated designs?
It is not classified as an automotive-standard device but complies with RoHS requirements.
What package and mounting style does it use?
The transistor is supplied in an SO-8 package intended for surface mounting on PCB assemblies.
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