Infineon BSZ N-Channel MOSFET, 149 A, 30 V N, 8-Pin TSDSON BSZ019N03LSATMA1
- RS庫存編號:
- 259-1480
- 製造零件編號:
- BSZ019N03LSATMA1
- 製造商:
- Infineon
可享批量折扣
查看批量定價選項小計（5 件, 每袋5個）*
HK$90.60
訂單超過 HK$250.00 免費送貨
有庫存
- 905 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$18.12 | HK$90.60 |
| 50 - 495 | HK$17.24 | HK$86.20 |
| 500 - 995 | HK$16.14 | HK$80.70 |
| 1000 - 2495 | HK$15.08 | HK$75.40 |
| 2500 + | HK$13.88 | HK$69.40 |
* 參考價格
- RS庫存編號:
- 259-1480
- 製造零件編號:
- BSZ019N03LSATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 149A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.50mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 149A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.50mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon n channel power MOSFET, It is ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make optimos 30V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. optimos 30V products are tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life. Available in half-bridge configuration.
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving costs
Saving space
Reducing power losses
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