Infineon CoolMOS^TM N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin PG-TO220-3 SPP06N80C3XKSA1
- RS庫存編號:
- 259-1575
- Distrelec 貨號:
- 304-34-463
- 製造零件編號:
- SPP06N80C3XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$98.30
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | HK$19.66 | HK$98.30 |
| 10 - 20 | HK$18.70 | HK$93.50 |
| 25 - 95 | HK$17.58 | HK$87.90 |
| 100 - 495 | HK$16.32 | HK$81.60 |
| 500 + | HK$15.04 | HK$75.20 |
* 參考價格
- RS庫存編號:
- 259-1575
- Distrelec 貨號:
- 304-34-463
- 製造零件編號:
- SPP06N80C3XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | PG-TO220-3 | |
| Series | CoolMOS^TM | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type PG-TO220-3 | ||
Series CoolMOS^TM | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.9Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon coolmostm power transistor it is switching application this is industrial application with high DC bulk voltage. It is qualified according to JEDEC1 for target applications.
Extreme dv/dt rated
High peak current capability
Ultra low gate charge
Ultra low effective capacitances
相关链接
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