Infineon IPT N-Channel MOSFET, 365 A, 100 V Enhancement, 16-Pin HDSOP IPTC014N10NM5ATMA1
- RS庫存編號:
- 259-2730
- 製造零件編號:
- IPTC014N10NM5ATMA1
- 製造商:
- Infineon
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HK$42,354.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 1,800 件從 2027年9月23日 起裝運發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1800 - 1800 | HK$23.53 | HK$42,354.00 |
| 3600 - 3600 | HK$23.06 | HK$41,508.00 |
| 5400 + | HK$22.599 | HK$40,678.20 |
* 參考價格
- RS庫存編號:
- 259-2730
- 製造零件編號:
- IPTC014N10NM5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 365A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPT | |
| Package Type | HDSOP | |
| Mount Type | Surface Mount | |
| Pin Count | 16 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 880mV | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 365A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPT | ||
Package Type HDSOP | ||
Mount Type Surface Mount | ||
Pin Count 16 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 880mV | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
Infineon IPT Series MOSFET, 100V Maximum Drain-Source Voltage, 365A Maximum Continuous Drain Current - IPTC014N10NM5ATMA1
This MOSFET is an enhancement-mode N-channel transistor designed for high-current switching in demanding electronic systems. It operates across a wide ambient range and is packaged for low-profile board mounting, offering substantial power handling for applications requiring robust conduction and thermal endurance.
Features and Benefits:
• Low conduction resistance reduces on-state losses for efficient power transfer
• High continuous drain current enables sustained heavy-current operation
• 375W power dissipation capacity supports high-power switching tasks
• 168nC gate charge balances drive energy and switching dynamics
• Wide operating temperature range allows operation in extreme environments
• High continuous drain current enables sustained heavy-current operation
• 375W power dissipation capacity supports high-power switching tasks
• 168nC gate charge balances drive energy and switching dynamics
• Wide operating temperature range allows operation in extreme environments
Applications
• Suitable for high-current motor drive stages
• Ideal for power-supply output stages and converters
• Used with battery management for high-discharge circuits
• Can be used for industrial inverter switching assemblies
• Ideal for power-supply output stages and converters
• Used with battery management for high-discharge circuits
• Can be used for industrial inverter switching assemblies
What gate voltage tolerance should be observed during operation?
The gate must not exceed a Peak of 20V relative to the source to avoid damage.
How does the device handle thermal stress during continuous operation?
It can dissipate up to 375W provided appropriate board thermal management and cooling are applied.
What resistance performance can be expected for conduction losses?
The on-resistance is specified at 1.4mΩ, which defines low conduction losses under rated conditions.
What temperature extremes can it withstand during storage or use?
It is rated to operate from -55°C up to 175°C, permitting use across a very wide thermal range.
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