Infineon IPD N-Channel MOSFET, 34 A, 200 V N TO-252 IPD320N20N3GATMA1

This MOSFET is an N-channel power transistor designed for surface-mounted applications where high-voltage switching and substantial continuous current are required. It operates across a wide thermal envelope and is compatible with RoHS requirements for restricted substances. The device is supplied in a Compact TO-252 package suited to dense assemblies and thermal management on conventional boards.

• 200V rating enabling high-voltage switching capability
• 34A continuous current supporting sustained load operation
• 32mΩ Rds(on) reducing conduction losses during switching
• -55°C to 175°C range allowing operation in extreme temperatures
• Surface-mount TO-252 package simplifying automated assembly

• Suitable for high-voltage power-conversion stages
• Ideal for industrial motor-drive front-ends
• Used with switch-mode power supplies for energy conversion
• Can be used for solid-state relay switching elements
• Suitable for compact, heat-managed power modules

It is rated to function from -55°C up to 175°C, permitting use across extended temperature environments.

The TO-252 surface-mount format supports automated pick-and-place and reflow processes for efficient production.

The device supports up to 200V between drain and source and continuous currents up to 34A, defining its high-voltage, high-current capability.

It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.

The component conforms to RoHS requirements for restricted substances.