Infineon iPB N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IPB015N06NF2SATMA1

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小計(1 包,共 2 件)*

HK$60.40

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2 - 8HK$30.20HK$60.40
10 - 48HK$28.95HK$57.90
50 - 98HK$27.80HK$55.60
100 - 248HK$26.35HK$52.70
250 +HK$25.55HK$51.10

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包裝方式:
RS庫存編號:
262-5852
製造零件編號:
IPB015N06NF2SATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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