Infineon HEXFET Type P-Channel MOSFET, -3.6 A, -30 V Enhancement, 8-Pin SOIC IRF7606TRPBF
- RS庫存編號:
- 262-6742
- 製造零件編號:
- IRF7606TRPBF
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$123.70
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年11月23日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$4.948 | HK$123.70 |
| 50 - 75 | HK$4.848 | HK$121.20 |
| 100 - 475 | HK$4.452 | HK$111.30 |
| 500 - 1975 | HK$4.044 | HK$101.10 |
| 2000 + | HK$3.968 | HK$99.20 |
* 參考價格
- RS庫存編號:
- 262-6742
- 製造零件編號:
- IRF7606TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3.6A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 1.8W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3.6A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 1.8W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.
Fully characterized avalanche voltage and current
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