Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF
- RS庫存編號:
- 262-6776
- Distrelec 貨號:
- 304-41-680
- 製造零件編號:
- IRFU3910PBF
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 10 件）*
HK$59.50
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年11月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$5.95 | HK$59.50 |
| 50 - 90 | HK$5.30 | HK$53.00 |
| 100 - 240 | HK$4.76 | HK$47.60 |
| 250 - 990 | HK$4.68 | HK$46.80 |
| 1000 + | HK$4.33 | HK$43.30 |
* 參考價格
- RS庫存編號:
- 262-6776
- Distrelec 貨號:
- 304-41-680
- 製造零件編號:
- IRFU3910PBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 115mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 29.3nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 115mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 29.3nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22mm | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fast switching
Fully avalanche rated
相关链接
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