Infineon HEXFET N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

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包裝方式:
RS庫存編號:
262-6776
Distrelec 貨號:
304-41-680
製造零件編號:
IRFU3910PBF
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29.3nC

Maximum Power Dissipation Pd

52W

Maximum Operating Temperature

175°C

Length

6.73mm

Width

6.22mm

Height

2.39mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fast switching

Fully avalanche rated

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