ROHM RSR025P03HZG Type P-Channel MOSFET, -2.5 A, 30 V Enhancement, 3-Pin SOT-346 RSR025P03HZGTL
- RS庫存編號:
- 264-3855
- 製造零件編號:
- RSR025P03HZGTL
- 製造商:
- ROHM
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查看批量定價選項小計（1 包，共 25 件）*
HK$127.70
訂單超過 HK$250.00 免費送貨
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- 加上 5,175 件從 2026年8月17日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$5.108 | HK$127.70 |
| 50 - 75 | HK$5.012 | HK$125.30 |
| 100 - 225 | HK$3.908 | HK$97.70 |
| 250 - 975 | HK$3.836 | HK$95.90 |
| 1000 + | HK$2.72 | HK$68.00 |
* 參考價格
- RS庫存編號:
- 264-3855
- 製造零件編號:
- RSR025P03HZGTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-346 | |
| Series | RSR025P03HZG | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 98mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Power Dissipation Pd | 1W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-346 | ||
Series RSR025P03HZG | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 98mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Power Dissipation Pd 1W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The ROHM small signal MOSFET is a MOSFET with low on resistance for automotive, suitable for switching, it is small surface mount package. Pb-free lead plating; RoHS compliant and AEC-Q101 qualified.
Built-in G-S protection diode
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