ROHM R6055VNX N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220

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RS庫存編號:
265-5419
製造零件編號:
R6055VNXC7G
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

R6055VNX

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.071Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free Plating, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.

Fast reverse recovery time (trr)

Low on resistance

Fast switching speed

Drive circuits can be simple

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