Vishay SIDR N-Channel MOSFET, 227 A, 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- RS庫存編號:
- 268-8285
- 製造零件編號:
- SIDR626EP-T1-RE3
- 製造商:
- Vishay
可享批量折扣
查看批量定價選項小計(1 包,共 2 件)*
HK$71.90
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 6 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | HK$35.95 | HK$71.90 |
| 50 - 98 | HK$32.30 | HK$64.60 |
| 100 - 248 | HK$26.40 | HK$52.80 |
| 250 - 998 | HK$25.80 | HK$51.60 |
| 1000 + | HK$20.65 | HK$41.30 |
* 參考價格
- RS庫存編號:
- 268-8285
- 製造零件編號:
- SIDR626EP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 227A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIDR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00174Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 227A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8DC | ||
Series SIDR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00174Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay N channel TrenchFET generation 4 power MOSFET has TOP side cooling feature provides additional venue for thermal transfer. It is used in applications such as synchronous rectification, motor drive switch, battery and load switch.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
相关链接
- Vishay SIDR N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay SiD N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIDR626EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR610EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5802EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR510EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR570EP-T1-RE3
- Vishay N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR578EP-T1-RE3
