Vishay SIHA Type N-Channel MOSFET, 9 A, 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- RS庫存編號:
- 268-8288
- 製造零件編號:
- SIHA150N60E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
HK$76.40
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 998 件從 2026年8月17日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | HK$38.20 | HK$76.40 |
| 10 - 18 | HK$34.55 | HK$69.10 |
| 20 - 98 | HK$33.75 | HK$67.50 |
| 100 - 498 | HK$28.25 | HK$56.50 |
| 500 + | HK$23.95 | HK$47.90 |
* 參考價格
- RS庫存編號:
- 268-8288
- 製造零件編號:
- SIHA150N60E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK SO-8DC | |
| Series | SIHA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK SO-8DC | ||
Series SIHA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHA Series MOSFET, 650V Drain Source Voltage, 9A Continuous Drain Current - SIHA150N60E-GE3
This MOSFET is a high-voltage N-channel transistor designed for power switching in surface-mount applications. It operates across a broad temperature range and is intended for circuits requiring substantial voltage headroom and moderate continuous current. The device is supplied in a PowerPAK SO-8DC package suitable for compact board layouts.
Features and Benefits:
• 650V drain-to-source rating enables high-voltage switching
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins
• 9A continuous drain current supports moderate power delivery
• 0.158Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows elevated load handling
• 36nC typical gate charge provides predictable switching control
• ±30V gate tolerance permits robust gate-drive margins
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages
• Ideal for industrial motor drive switching stages
• Used for server and telecoms power-management modules
• Can be used for LED drivers requiring high-voltage switches
• Appropriate for inverter and UPS power stages
What mounting style does it require for PCB assembly?
It is a surface-mount device supplied in a PowerPAK SO-8DC package, designed for reflow soldering onto PCB land patterns compatible with SO-8DC footprints.
How does it behave in extended temperature environments?
The transistor is rated to operate from -55°C up to 150°C, permitting use in systems exposed to low ambient conditions and elevated internal heating.
What gate-drive constraints should be observed?
The gate-to-source voltage must not exceed ±30V, so gate drivers should be limited within those bounds to prevent gate-oxide stress.
What standard restricts hazardous substances in this component?
The device conforms to RoHS requirements, indicating restrictions on certain hazardous materials during manufacture.
相关链接
- Vishay SIHA Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK SO-8DC SIHA150N60E-GE3
- Vishay Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR500EP-T1-RE3
- Vishay SIDR Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8DC SIDR626EP-T1-RE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3
- Vishay E Type N-Channel Power MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay SiH N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHH070N60EF
- Vishay SiH N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHK045N60E
- Vishay SiH N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHH068N60E