Infineon OptiMOS Type N-Channel MOSFET, 6 A, 650 V Enhancement, 3-Pin TO-263 IPB65R660CFDAATMA1
- RS庫存編號:
- 273-2999
- 製造零件編號:
- IPB65R660CFDAATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 1000 件）*
HK$7,991.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 + | HK$7.991 | HK$7,991.00 |
* 參考價格
- RS庫存編號:
- 273-2999
- 製造零件編號:
- IPB65R660CFDAATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.66Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.66Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS CFDA super junction MOSFET is Infineon's second generation of market leading automotive qualified high voltage cool MOS power MOSFETs. In addition to the well known attributes of high quality and reliability required by the auto
Reduced EMI appearance and easy to design in
Better light load efficiency
Lower switching losses
相关链接
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