Infineon IPD Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 273-3002
- 製造零件編號:
- IPD048N06L3GATMA1
- 製造商:
- Infineon
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可享批量折扣
小計(1 包,共 5 件)*
HK$69.60
訂單超過 HK$250.00 免費送貨
有庫存
- 2,045 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$13.92 | HK$69.60 |
| 50 - 95 | HK$10.68 | HK$53.40 |
| 100 - 245 | HK$9.94 | HK$49.70 |
| 250 - 995 | HK$9.76 | HK$48.80 |
| 1000 + | HK$9.58 | HK$47.90 |
* 參考價格
- RS庫存編號:
- 273-3002
- 製造零件編號:
- IPD048N06L3GATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 6.223mm | |
| Length | 10.48mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 6.223mm | ||
Length 10.48mm | ||
Automotive Standard No | ||
The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications
Highest system efficiency
Less paralleling required
Increased power density
相关链接
- Infineon IPD Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IPD048N06L3GATMA1
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