Infineon IPN Type N-Channel MOSFET, 3.6 A, 650 V Enhancement, 3-Pin PG-SOT223
- RS庫存編號:
- 273-3016
- 製造零件編號:
- IPN60R1K5PFD7SATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$51.50
訂單超過 HK$250.00 免費送貨
有庫存
- 2,990 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$5.15 | HK$51.50 |
| 50 - 90 | HK$4.36 | HK$43.60 |
| 100 - 240 | HK$4.05 | HK$40.50 |
| 250 - 990 | HK$3.97 | HK$39.70 |
| 1000 + | HK$3.89 | HK$38.90 |
* 參考價格
- RS庫存編號:
- 273-3016
- 製造零件編號:
- IPN60R1K5PFD7SATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-SOT223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Maximum Power Dissipation Pd | 6W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC Standard | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-SOT223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Maximum Power Dissipation Pd 6W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC Standard | ||
Automotive Standard No | ||
The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications.
BOM cost reduction and easy manufacturing
Robustness and reliability
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