STMicroelectronics N-Channel, 25 A, 750 V Enhancement, 4-Pin PowerFLAT (5 x 6) HV SGT65R65AL
- RS庫存編號:
- 275-1318P
- 製造零件編號:
- SGT65R65AL
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 275-1318P
- 製造零件編號:
- SGT65R65AL
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 25 A | |
| Maximum Drain Source Voltage (Vds) | 750 V | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Package Type | PowerFLAT (5 x 6) HV | |
| Mount Type | Surface | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 25 A | ||
Maximum Drain Source Voltage (Vds) 750 V | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Package Type PowerFLAT (5 x 6) HV | ||
Mount Type Surface | ||
- COO (Country of Origin):
- CN
The STMicroelectronics e-mode powerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
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