onsemi N-Channel MOSFET, 14 A, 50 V Enhancement, 3-Pin IPAK (TO-251) RFD14N05L
- RS庫存編號:
- 325-7580
- 製造零件編號:
- RFD14N05L
- 製造商:
- onsemi
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- RS庫存編號:
- 325-7580
- 製造零件編號:
- RFD14N05L
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -10V, +10V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.8mm | |
| Width | 2.5mm | |
| Standards/Approvals | No | |
| Height | 6.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type IPAK (TO-251) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -10V, +10V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.8mm | ||
Width 2.5mm | ||
Standards/Approvals No | ||
Height 6.3mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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