N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1
- RS庫存編號:
- 354-5708
- Distrelec 貨號:
- 302-83-876
- 製造零件編號:
- BSP135H6327XTSA1
- 製造商:
- Infineon
可享批量折扣
Price 个**
HK$10.30
300 將在 1 工作日發貨 （本地庫存）*
10 在3 工作日內發貨 (海外庫存)
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$850.00 即可享受 免費 送貨服務
單位 | 每單位 |
|---|---|
| 1 - 249 | HK$10.30 |
| 250 - 499 | HK$10.10 |
| 500 + | HK$9.90 |
** 參考價格
- RS庫存編號:
- 354-5708
- Distrelec 貨號:
- 302-83-876
- 製造零件編號:
- BSP135H6327XTSA1
- 製造商:
- Infineon
Infineon SIPMOS® N-Channel MOSFETs
Infineon SIPMOS® Series MOSFET, 120 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP135H6327XTSA1
This MOSFET is intended for efficient switching applications, known for its high voltage handling capabilities and low power consumption profile. As a single N-channel depletion mode MOSFET, it is well-suited for various electronic applications that require compact surface mount solutions. With a maximum drain-source voltage of 600V, it is a suitable choice for automotive and power management sectors prioritising efficiency and reliability.
Features & Benefits
• Utilises SIPMOS® technology for enhanced efficiency
• Supports high voltage capacities up to 600V for operational reliability
• Low power consumption rated at 120mA improves energy efficiency
• Designed for surface mount applications, providing space-saving benefits
• ESD protection rated for 1A to safeguard sensitive circuits
• Automotive qualified under AEC-Q101, conforming to industry standards
• Supports high voltage capacities up to 600V for operational reliability
• Low power consumption rated at 120mA improves energy efficiency
• Designed for surface mount applications, providing space-saving benefits
• ESD protection rated for 1A to safeguard sensitive circuits
• Automotive qualified under AEC-Q101, conforming to industry standards
Applications
• Suitable for power management solutions in electronic devices
• Utilised in low voltage with high voltage capabilities
• Integrated in packaging for efficient thermal management
• Used in control circuits that require robust components
• Utilised in low voltage with high voltage capabilities
• Integrated in packaging for efficient thermal management
• Used in control circuits that require robust components
What are the implications of the thermal resistance values for performance?
The thermal resistance indicates the device's heat dissipation effectiveness, ensuring it operates within safe limits during continuous use. Lower thermal resistance values can enhance performance by improving heat management, particularly in high-current applications.
Can this MOSFET handle high-frequency switching applications?
Yes, it features low gate charge characteristics, enabling efficient operation in high-frequency environments, making it suitable for a variety of modern electronic applications.
What should be considered regarding installation and compatibility?
It is important to confirm that the mounting type aligns with the circuit board design to optimise performance and avoid potential thermal management or connectivity issues.
How does the maximum power dissipation impact its application?
With a maximum power dissipation of 1.8W, it is essential to ensure that usage does not exceed this limit to prevent overheating and potential failure. Appropriate thermal management is crucial in design.
What are the limitations regarding gate-source voltage?
The gate-source voltage can range from -20V to +20V, which must be adhered to in order to maintain effective operation without damaging the device or compromising performance.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 mA |
| Maximum Drain Source Voltage | 600 V |
| Series | SIPMOS® |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 60 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 3.7 nC @ 5 V |
| Maximum Operating Temperature | +150 °C |
| Width | 3.5mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Length | 6.5mm |
| Automotive Standard | AEC-Q101 |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
