Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1
- RS庫存編號:
- 826-9276
- Distrelec 貨號:
- 304-44-411
- 製造零件編號:
- BSP125H6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
HK$234.10
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 200 | HK$4.682 | HK$234.10 |
| 250 - 450 | HK$4.566 | HK$228.30 |
| 500 + | HK$4.494 | HK$224.70 |
* 參考價格
- RS庫存編號:
- 826-9276
- Distrelec 貨號:
- 304-44-411
- 製造零件編號:
- BSP125H6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
相关链接
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 400 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223