Infineon HEXFET N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-220 IRF3205ZPBF

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包裝方式:
RS庫存編號:
688-6829
製造零件編號:
IRF3205ZPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

170W

Maximum Gate Source Voltage Vgs

-20V, +20V

Typical Gate Charge Qg @ Vgs

76nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.54mm

Standards/Approvals

No

Height

8.77mm

Width

4.69mm

Automotive Standard

No

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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