Vishay Si4116DY Type N-Channel MOSFET, 12.7 A, 25 V Enhancement, 8-Pin SOIC SI4116DY-T1-GE3
- RS庫存編號:
- 710-3317
- 製造零件編號:
- SI4116DY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
HK$74.60
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 2,410 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | HK$14.92 | HK$74.60 |
| 625 - 1245 | HK$14.56 | HK$72.80 |
| 1250 + | HK$14.32 | HK$71.60 |
* 參考價格
- RS庫存編號:
- 710-3317
- 製造零件編號:
- SI4116DY-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.7A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | Si4116DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.55mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.7A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series Si4116DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.55mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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