Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2030TRPBF
- RS庫存編號:
- 725-9353
- Distrelec 貨號:
- 304-45-312
- 製造零件編號:
- IRLML2030TRPBF
- 製造商:
- Infineon
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HK$38.40
訂單超過 HK$250.00 免費送貨
有限的庫存
- 加上 800 件從 2026年8月17日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | HK$1.92 | HK$38.40 |
| 760 - 1480 | HK$1.89 | HK$37.80 |
| 1500 + | HK$1.835 | HK$36.70 |
* 參考價格
- RS庫存編號:
- 725-9353
- Distrelec 貨號:
- 304-45-312
- 製造零件編號:
- IRLML2030TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.02mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 100mΩ Maximum Drain Source Resistance - IRLML2030TRPBF
This MOSFET is a compact N-channel enhancement device designed for low-power switching in small-form-factor surface-mount assemblies. It is intended for applications requiring moderate current handling and a 30V blocking capability, performing switching duties across a wide ambient range from cold to high-temperature environments.
Features and Benefits:
• Low on-resistance 100mΩ reduces conduction losses and heat
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers
Applications
• Suitable for battery protection and load switching circuits
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics
What thermal range can it operate within?
It functions from -55°C up to 150°C, enabling use across extreme ambient conditions.
How is it packaged for PCB assembly?
It is supplied in a SOT-23 surface-mount package for compact board placement.
What electrical role does the device serve in switching designs?
It acts as a low-voltage switch transistor, handling on/off control while limiting conduction losses due to its specified RDS(on).
How small is the component footprint for layout planning?
The device measures 3.04 x 1.4 x 1.02mm, allowing tight component packing on SMD boards.
相关链接
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
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- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
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