Toshiba Type P-Channel MOSFET, 2 A, 30 V Enhancement, 6-Pin UF6 SSM6J402TU(TE85L,F
- RS庫存編號:
- 756-2779
- 製造零件編號:
- SSM6J402TU(TE85L,F
- 製造商:
- Toshiba
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
HK$30.40
訂單超過 HK$250.00 免費送貨
有庫存
- 590 件準備從其他地點送貨
- 加上 1,830 件從 2026年6月11日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | HK$3.04 | HK$30.40 |
| 50 - 90 | HK$2.95 | HK$29.50 |
| 100 - 240 | HK$2.86 | HK$28.60 |
| 250 - 490 | HK$2.80 | HK$28.00 |
| 500 + | HK$2.74 | HK$27.40 |
* 參考價格
- RS庫存編號:
- 756-2779
- 製造零件編號:
- SSM6J402TU(TE85L,F
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | UF6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.3nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Height | 0.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type UF6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.3nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Height 0.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
Dual MOSFET P-Channel SSM6Pxx, Toshiba
MOSFET Transistors, Toshiba
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