onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 3.8 A, 20 V Enhancement, 6-Pin MicroFET FDME1034CZT
- RS庫存編號:
- 759-9147
- 製造零件編號:
- FDME1034CZT
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 組，共 5 件）*
HK$44.10
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 1245 | HK$8.82 | HK$44.10 |
| 1250 - 2495 | HK$8.60 | HK$43.00 |
| 2500 + | HK$8.46 | HK$42.30 |
* 參考價格
- RS庫存編號:
- 759-9147
- 製造零件編號:
- FDME1034CZT
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MicroFET | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 530mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Forward Voltage Vf | 700mV | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.6mm | |
| Width | 1.6mm | |
| Height | 500μm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MicroFET | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 530mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Forward Voltage Vf 700mV | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.6mm | ||
Width 1.6mm | ||
Height 500μm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
相关链接
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