onsemi NTZS3151P Type P-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SOT-563 NTZS3151PT1G
- RS庫存編號:
- 780-4806
- 製造零件編號:
- NTZS3151PT1G
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$50.10
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年11月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 975 | HK$2.004 | HK$50.10 |
| 1000 - 1975 | HK$1.952 | HK$48.80 |
| 2000 + | HK$1.92 | HK$48.00 |
* 參考價格
- RS庫存編號:
- 780-4806
- 製造零件編號:
- NTZS3151PT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTZS3151P | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.9V | |
| Maximum Power Dissipation Pd | 210mW | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 600μm | |
| Length | 1.7mm | |
| Width | 1.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTZS3151P | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.9V | ||
Maximum Power Dissipation Pd 210mW | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Maximum Operating Temperature 150°C | ||
Height 600μm | ||
Length 1.7mm | ||
Width 1.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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