Vishay Single D Series N-Channel MOSFET, 3 A, 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3
- RS庫存編號:
- 787-9143
- 製造零件編號:
- SIHD3N50D-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
不可供應
RS 不再對此產品進貨。
替代產品
該產品我們目前不提供。 這是我們推薦的替代產品。
- RS庫存編號:
- 787-9143
- 製造零件編號:
- SIHD3N50D-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | D Series | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 30V, -30V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series D Series | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 30V, -30V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 2.38mm | ||
Length 6.73mm | ||
Width 6.22mm | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
相关链接
- Vishay D Series N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3
- Vishay E N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3
- Vishay EF Series N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 SIHD250N60EF-GE3
- Vishay E N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
- Vishay E N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
- Vishay E N-Channel Power MOSFET 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3
- Vishay SUD23N06-31 N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3