Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
- RS庫存編號:
- 787-9288
- 製造零件編號:
- SIA447DJ-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
HK$27.40
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2,060 件從 2026年5月25日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 740 | HK$2.74 | HK$27.40 |
| 750 - 1490 | HK$2.66 | HK$26.60 |
| 1500 + | HK$2.63 | HK$26.30 |
* 參考價格
- RS庫存編號:
- 787-9288
- 製造零件編號:
- SIA447DJ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 19W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 19W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Automotive Standard No | ||
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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