Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- RS庫存編號:
- 787-9480
- 製造零件編號:
- SQD25N06-22L_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
HK$81.80
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 25 件準備從其他地點送貨
- 最終 1,865 件從 2026年6月04日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 495 | HK$16.36 | HK$81.80 |
| 500 - 995 | HK$16.06 | HK$80.30 |
| 1000 + | HK$15.78 | HK$78.90 |
* 參考價格
- RS庫存編號:
- 787-9480
- 製造零件編號:
- SQD25N06-22L_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SQ Rugged | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SQ Rugged | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
相关链接
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD40N06-14L_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 SQD45P03-12_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 SQD19P06-60L_GE3