IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247 IXFH70N20Q3

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs

小計（1 件）*

HK$115.80

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看
單位
每單位
1 +HK$115.80

* 參考價格

包裝方式：
RS庫存編號:
801-1392
製造零件編號:
IXFH70N20Q3
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

200V

Series

HiperFET, Q3-Class

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

67nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

690W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

16.26mm

Standards/Approvals

No

Height

16.26mm

Width

5.3 mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

相关链接