IXYS HiperFET, Q3-Class N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247

RS庫存編號:: 801-1392P
製造零件編號:: IXFH70N20Q3
製造商:: IXYS

IXYS HiperFET, Q3-Class N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247

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小計（1 件, 以管提供）*

HK$138.20

訂單超過 HK$250.00 免費送貨

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RS庫存編號:: 801-1392P
製造零件編號:: IXFH70N20Q3
製造商:: IXYS

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	IXYS
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	200V
	Series	HiperFET, Q3-Class
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	690W
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	67nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Length	16.26mm
	Height	16.26mm
	Standards/Approvals	No
	Width	5.3mm
	Automotive Standard	No

	選取全部
	品牌 IXYS
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 200V
	Series HiperFET, Q3-Class
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 690W
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 67nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Length 16.26mm
	Height 16.26mm
	Standards/Approvals No
	Width 5.3mm
	Automotive Standard No

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS

A wide range of Advanced discrete Power MOSFET devices from IXYS

IXYS HiperFET, Q3-Class N-Channel MOSFET, 70 A, 200 V Enhancement, 3-Pin TO-247

訂單超過 HK$250.00 免費送貨

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

MOSFET Transistors, IXYS

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