Vishay SiB406EDK N-Channel MOSFET, 5.1 A, 20 V Enhancement, 6-Pin SC-75 SIB406EDK-T1-GE3
- RS庫存編號:
- 814-1247
- 製造零件編號:
- SIB406EDK-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
HK$86.80
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年7月22日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | HK$4.34 | HK$86.80 |
| 760 - 1480 | HK$4.23 | HK$84.60 |
| 1500 + | HK$4.165 | HK$83.30 |
* 參考價格
- RS庫存編號:
- 814-1247
- 製造零件編號:
- SIB406EDK-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SiB406EDK | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Forward Voltage Vf | 800mV | |
| Maximum Power Dissipation Pd | 10W | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Height | 800μm | |
| Width | 1.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SiB406EDK | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Forward Voltage Vf 800mV | ||
Maximum Power Dissipation Pd 10W | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Height 800μm | ||
Width 1.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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