Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
- RS庫存編號:
- 814-1314
- 製造零件編號:
- SISS23DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 包，共 20 件）*
HK$158.20
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 + | HK$7.91 | HK$158.20 |
* 參考價格
- RS庫存編號:
- 814-1314
- 製造零件編號:
- SISS23DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Power Dissipation Pd | 57W | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.78mm | |
| Standards/Approvals | No | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Power Dissipation Pd 57W | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Height 0.78mm | ||
Standards/Approvals No | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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