Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- RS庫存編號:
- 819-3920
- 製造零件編號:
- SQ4431EY-T1_GE3
- 製造商:
- Vishay
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查看批量定價選項小計（1 包，共 20 件）*
HK$180.30
訂單超過 HK$250.00 免費送貨
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- 加上 2,420 件從 2026年8月17日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 620 | HK$9.015 | HK$180.30 |
| 640 - 1240 | HK$8.785 | HK$175.70 |
| 1260 + | HK$8.655 | HK$173.10 |
* 參考價格
- RS庫存編號:
- 819-3920
- 製造零件編號:
- SQ4431EY-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6W | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.55mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6W | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1.55mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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