DiodesZetex Isolated 2 N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7
- RS庫存編號:
- 827-0462
- 製造零件編號:
- DMN2014LHAB-7
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
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查看批量定價選項小計(1 包,共 50 件)*
HK$208.10
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 2,850 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | HK$4.162 | HK$208.10 |
| 750 - 1450 | HK$4.06 | HK$203.00 |
| 1500 + | HK$3.996 | HK$199.80 |
* 參考價格
- RS庫存編號:
- 827-0462
- 製造零件編號:
- DMN2014LHAB-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 9.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Height | 0.6mm | |
| Length | 3.05mm | |
| Standards/Approvals | AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202 | |
| Width | 2.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 9.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Height 0.6mm | ||
Length 3.05mm | ||
Standards/Approvals AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202 | ||
Width 2.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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