Toshiba TK N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-3PN TK12J60W,S1VQ(O
- RS庫存編號:
- 891-2881
- 製造零件編號:
- TK12J60W,S1VQ(O
- 製造商:
- Toshiba
可享批量折扣
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HK$26.80
訂單超過 HK$250.00 免費送貨
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- 加上 24 件從 2026年9月14日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 19 | HK$26.80 |
| 20 - 49 | HK$25.80 |
| 50 - 99 | HK$25.20 |
| 100 - 249 | HK$24.70 |
| 250 + | HK$24.20 |
* 參考價格
- RS庫存編號:
- 891-2881
- 製造零件編號:
- TK12J60W,S1VQ(O
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | TK | |
| Package Type | TO-3PN | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.7V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 4.5mm | |
| Length | 15.5mm | |
| Height | 20mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series TK | ||
Package Type TO-3PN | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.7V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 4.5mm | ||
Length 15.5mm | ||
Height 20mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
相关链接
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