Infineon Single OptiMOS™ 3 1 N-Channel MOSFET, 58 A, 100 V Enhancement, 3-Pin TO-220 IPP126N10N3GXKSA1

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RS庫存編號:
892-2273
製造零件編號:
IPP126N10N3GXKSA1
製造商:
Infineon
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品牌

Infineon

Transistor Configuration

Single

Series

OptiMOS™ 3

Number of Elements per Chip

1

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

58 A

Maximum Drain Source Voltage (Vds)

100 V

Channel Mode

Enhancement

Pin Count

3

Package Type

TO-220

Forward Voltage (Vf)

1.2 V

Height

15.95 mm

Length

10.36 mm

Maximum Drain Source Resistance (Rds)

23.5 mΩ

Maximum Gate Source Voltage (Vgs)

20 V, -20 V

Maximum Operating Temperature

175 °C

Maximum Power Dissipation (Pd)

94 W

Minimum Operating Temperature

-55 °C

Mount Type

Through Hole

Width

4.57 mm

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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