Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V Enhancement, 3-Pin TO-263 CSD19536KTTT
- RS庫存編號:
- 900-9857
- 製造零件編號:
- CSD19536KTTT
- 製造商:
- Texas Instruments
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- RS庫存編號:
- 900-9857
- 製造零件編號:
- CSD19536KTTT
- 製造商:
- Texas Instruments
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Texas Instruments | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 272A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NexFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Texas Instruments | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 272A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NexFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 9.65mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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