Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement, 4-Pin SOT-223

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RS庫存編號:
911-0926
製造零件編號:
BSP170PH6327XTSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Power Dissipation Pd

1.8W

Typical Gate Charge Qg @ Vgs

10nC

Maximum Operating Temperature

150°C

Height

1.6mm

Length

6.5mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 1.9A Maximum Continuous Drain Current - BSP170PH6327XTSA1


This MOSFET is a P-channel enhancement device designed for surface-mount power switching in demanding automotive and industrial contexts. It handles negative gate-drive operation and suits circuits requiring moderate current handling and thermal endurance across a wide temperature range.

Features and Benefits:


• 60V drain voltage enables robust high-voltage switching
• 300mΩ Rds(on) reduces conduction losses during operation
• 1.9A continuous current supports steady-state load delivery
• 10nC typical gate charge enables efficient drive control
• 1.8W maximum dissipation manages moderate thermal loads
• -55°C to 150°C operating range maintains function in extremes

Applications


• Suitable for load switching in automotive electronics
• Ideal for battery management and power-rail control
• Used with driver ICs for DC-DC conversion stages
• Can be used for polarity protection in vehicle systems
• Suitable for compact surface-mount power modules

What mounting style does it require for PCB assembly?


It is supplied in a SOT-223 package intended for surface-mount placement.

How many terminals are available for circuit connections?


The device uses a four-pin configuration to accommodate source, drain and gate connectivity.

What gate-voltage limits must be observed during design?


The gate-to-source voltage must not exceed ±20V to prevent device stress.

How does the component perform under automotive qualification standards?


It meets the AEC-Q101 automotive requirement for semiconductor devices used in vehicle systems.

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