Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 913-4042
- 製造零件編號:
- IRLML0030TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$3,264.00
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 9,000 件從 2026年8月17日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$1.088 | HK$3,264.00 |
| 15000 + | HK$1.066 | HK$3,198.00 |
* 參考價格
- RS庫存編號:
- 913-4042
- 製造零件編號:
- IRLML0030TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.3W | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.3W | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 27mΩ Maximum Drain Source Resistance - IRLML0030TRPBF
This MOSFET is a compact N-channel switching transistor designed for surface-mount power control in compact electronic assemblies. It operates as an enhancement-mode device suitable for low-voltage switching and power-management tasks across a wide temperature span, enabling reliable performance in demanding thermal environments.
Features and Benefits:
• Low on-resistance gives efficient conduction and reduced losses
• 30V drain-source rating permits safe low-voltage switching
• 5.3A continuous drain current supports moderate load currents
• Typical gate charge 2.6nC enables fast, low-energy switching
• Maximum power dissipation 1.3W allows small-signal power handling
• Gate-source tolerance ±20V offers robust drive margin
• 30V drain-source rating permits safe low-voltage switching
• 5.3A continuous drain current supports moderate load currents
• Typical gate charge 2.6nC enables fast, low-energy switching
• Maximum power dissipation 1.3W allows small-signal power handling
• Gate-source tolerance ±20V offers robust drive margin
Applications
• Suitable for battery-powered DC load switching
• Ideal for point-of-load converters in compact electronics
• Used for motor driver stages with modest currents
• Can be used for protection and load-disconnect circuits
• Used with logic-level gate drivers in control boards
• Ideal for point-of-load converters in compact electronics
• Used for motor driver stages with modest currents
• Can be used for protection and load-disconnect circuits
• Used with logic-level gate drivers in control boards
What thermal range can it withstand in harsh environments?
It is specified to operate from -55°C up to 150°C, covering typical industrial and extended-temperature use cases.
What package and mounting method does it require for assembly?
It is supplied in an SOT-23 package and is intended for surface-mount assembly processes.
How does its gate-charge value affect drive requirements?
A gate charge of 2.6nC reduces energy needed per switching transition, lowering driver current and switching losses in high-frequency applications.
What are the electrical limits for safe operation of the channel?
The device’s maximum drain-source voltage is 30V and the maximum drain-source resistance is 27mΩ, defining its voltage tolerance and conduction efficiency.
相关链接
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML0030TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 25 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23