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IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264

Name: IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V Enhancement, 3-Pin TO-264
Brand: IXYS
SKU: 920-0874
Availability: InStock

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小計（1 管，共 25 件）*

HK$5,726.20

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單位	每單位	每管*
25 - 100	HK$229.048	HK$5,726.20
125 +	HK$224.468	HK$5,611.70

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產品詳細資訊

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選取全部	屬性	值
	品牌	IXYS
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	27A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-264
	Series	HiperFET, Q-Class
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	320mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500W
	Typical Gate Charge Qg @ Vgs	170nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	150°C
	Width	5.13mm
	Standards/Approvals	No
	Height	26.16mm
	Length	19.96mm
	Automotive Standard	No

	選取全部
	品牌 IXYS
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 27A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-264
	Series HiperFET, Q-Class
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 320mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500W
	Typical Gate Charge Qg @ Vgs 170nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature 150°C
	Width 5.13mm
	Standards/Approvals No
	Height 26.16mm
	Length 19.96mm
	Automotive Standard No

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

A wide range of advanced discrete Power MOSFET devices from IXYS

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