onsemi 1.2 kV 10 A Schottky Diode & Rectifier Merged Pin Schottky 3-Pin TO-247-3 UJ3D1210KS
- RS庫存編號:
- 648-524
- 製造零件編號:
- UJ3D1210KS
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 袋，共 2 件）*
HK$107.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每袋* |
|---|---|---|
| 2 + | HK$53.50 | HK$107.00 |
* 參考價格
- RS庫存編號:
- 648-524
- 製造零件編號:
- UJ3D1210KS
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | UJ3 | |
| Diode Configuration | Single | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 110μA | |
| Maximum Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 120A | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.96mm | |
| Length | 15.9mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Width | 5.03mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-247-3 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series UJ3 | ||
Diode Configuration Single | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 110μA | ||
Maximum Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 120A | ||
Maximum Operating Temperature 175°C | ||
Height 20.96mm | ||
Length 15.9mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Width 5.03mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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