onsemi 650 V 11 A Diode Schottky 2-Pin TO-220
- RS庫存編號:
- 194-5751
- 製造零件編號:
- FFSP1065B
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
享受批量購買折扣
額外添加100件可節省HK$37.60
查看批量定價選項小計（1 管，共 50 件）*
HK$863.10
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 750 個，準備發貨
單位 | 每單位 | 每管* | 節省 |
|---|---|---|---|
| 50 - 50 | HK$17.262 | HK$863.10 | - |
| 100 - 150 | HK$16.886 | HK$844.30 | HK$37.60 |
| 200 + | HK$16.51 | HK$825.50 | HK$150.40 |
* 參考價格
- RS庫存編號:
- 194-5751
- 製造零件編號:
- FFSP1065B
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 11A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 650A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Width | 2.92mm | |
| Height | 16.51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 11A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 650A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Width 2.92mm | ||
Height 16.51mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Max Junction Temperature
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
Pb-Free, Halogen Free/BFR Free
175C
49 mJ
Applications
General Purpose
SMPS
Solar Inverter
UPS
Power Switching Circuit
相关链接
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