Infineon 1.2 kV 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1
- RS庫存編號:
- 222-4831
- 製造零件編號:
- IDM08G120C5XTMA1
- 製造商:
- Infineon
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HK$148.00
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 5 - 5 | HK$29.60 | HK$148.00 | - |
| 10 - 95 | HK$29.06 | HK$145.30 | 1% |
| 100 - 245 | HK$28.54 | HK$142.70 | 3% |
| 250 - 495 | HK$28.02 | HK$140.10 | 5% |
| 500 + | HK$27.52 | HK$137.60 | 7% |
* 參考價格
- RS庫存編號:
- 222-4831
- 製造零件編號:
- IDM08G120C5XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | SMD | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.85V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Length | 6.65mm | |
| Width | 2.35mm | |
| Standards/Approvals | JEDEC1) | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type SMD | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.85V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 70A | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Length 6.65mm | ||
Width 2.35mm | ||
Standards/Approvals JEDEC1) | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
相关链接
- Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1
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- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
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