Infineon 650 V 41 A Schottky Barrier Diode Schottky TO-220-2 IDH20G65C6XKSA1
- RS庫存編號:
- 242-0972
- 製造零件編號:
- IDH20G65C6XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 500 件）*
HK$18,129.00
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單位 | 每單位 | 每管* |
|---|---|---|
| 500 - 500 | HK$36.258 | HK$18,129.00 |
| 1000 - 1000 | HK$35.533 | HK$17,766.50 |
| 1500 + | HK$34.466 | HK$17,233.00 |
* 參考價格
- RS庫存編號:
- 242-0972
- 製造零件編號:
- IDH20G65C6XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Schottky Barrier Diode | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 41A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | XDH20G65 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Maximum Forward Voltage Vf | 1.25V | |
| Peak Reverse Current Ir | 153μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Through Hole | ||
Product Type Schottky Barrier Diode | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 41A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series XDH20G65 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Maximum Forward Voltage Vf 1.25V | ||
Peak Reverse Current Ir 153μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 99A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
The Infineon Schottky diodes & rectifiers SIC DIODES have repetitive reverse voltage(Vrrm) is 650 V.The operating temperature is starts from -55 °C to 175 °C.
Through hole mounting technology
108 W Power Dissipation
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
相关链接
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