Alliance Memory SRAM- 4 MB
- RS庫存編號:
- 230-8468
- 製造零件編號:
- AS7C34098A-10TIN
- 製造商:
- Alliance Memory
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可享批量折扣
查看批量定價選項小計（1 托盤，共 135 件）*
HK$9,693.675
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年11月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 135 - 135 | HK$71.805 | HK$9,693.68 |
| 270 - 405 | HK$70.512 | HK$9,519.12 |
| 540 - 945 | HK$69.242 | HK$9,347.67 |
| 1080 - 1890 | HK$67.858 | HK$9,160.83 |
| 2025 + | HK$66.499 | HK$8,977.37 |
* 參考價格
- RS庫存編號:
- 230-8468
- 製造零件編號:
- AS7C34098A-10TIN
- 製造商:
- Alliance Memory
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Alliance Memory | |
| Product Type | SRAM | |
| Memory Size | 4MB | |
| Organisation | 256 k x 16 Bit | |
| Number of Words | 256K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 55ns | |
| Address Bus Width | 16bit | |
| Timing Type | 10/12/15/20 Ns | |
| Minimum Supply Voltage | 3V | |
| Mount Type | Surface | |
| Maximum Supply Voltage | 3.6V | |
| Package Type | TSOP-44 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Length | 18.6mm | |
| Height | 1.05mm | |
| Standards/Approvals | JEDEC | |
| Width | 10.26mm | |
| Series | AS7C34098A | |
| Automotive Standard | No | |
| Supply Current | 8mA | |
| 選取全部 | ||
|---|---|---|
品牌 Alliance Memory | ||
Product Type SRAM | ||
Memory Size 4MB | ||
Organisation 256 k x 16 Bit | ||
Number of Words 256K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 55ns | ||
Address Bus Width 16bit | ||
Timing Type 10/12/15/20 Ns | ||
Minimum Supply Voltage 3V | ||
Mount Type Surface | ||
Maximum Supply Voltage 3.6V | ||
Package Type TSOP-44 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Length 18.6mm | ||
Height 1.05mm | ||
Standards/Approvals JEDEC | ||
Width 10.26mm | ||
Series AS7C34098A | ||
Automotive Standard No | ||
Supply Current 8mA | ||
The Alliance Memory AS7C34098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words x 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are Ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.
Easy memory expansion with CE, OE inputs
TTL- and CMOS-compatible, three-state I/O
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